Latest resources from Efficient Power Conversion Corporation (EPC)
eGaN® FET Drivers and Layout Considerations
When considering gate drive requirements, the three most important parameters for eGaN FETs are (1) the maximum allowable gate voltage, (2) the gat...
eGaN® FETs and ICs for 48 V-12 V Regulated B...
Unregulated performance in a regulated design delivers unprecedented power density.
Low QOSS, zero QRR and low QGD, along with low inductance...
eGaN® FETs in High Frequency Resonant Conver...
In this white paper eGaN FET technology is applied in a high frequency resonant converter. Previously, the advantages provided by eGaN FETs in hard...