eGaN® FETs for Envelope Tracking
Gallium nitride transistors can be used to improve the efficiency of DC-DC conversion.
In this white paper we look at a new application that is being enabled by gallium nitride technology that has been difficult to implement using traditional silicon MOSFET power devices.
Download this whitepaper to learn more.
Read More
By submitting this form you agree to Efficient Power Conversion Corporation (EPC) contacting you with marketing-related emails or by telephone. You may unsubscribe at any time. Efficient Power Conversion Corporation (EPC) web sites and communications are subject to their Privacy Notice.
By requesting this resource you agree to our terms of use. All data is protected by our Privacy Notice. If you have any further questions please email dataprotection@techpublishhub.com
Related Categories: Capacitors, Communication, Components, cooling, Power
More resources from Efficient Power Conversion Corporation (EPC)
Optimizing PCB Layout
This white paper will explore the optimization of PCB layout for an eGaN FET based point of load (POL) buck converter, comparing the conventional d...
Improve DC-DC Forward Converter Efficiency with eGaN FETs
DC-DC converter designers can achieve higher power density at lower power levels by using forward converters with synchronous rectification and gal...
Dead-Time Optimization for Maximum Efficiency
In this white paper EPC continues our exploration of optimization issues and look at the impact of dead-time on system efficiency for eGaN® FETs a...
