Improve DC-DC Forward Converter Efficiency with eGaN FETs
DC-DC converter designers can achieve higher power density at lower power levels by using forward converters with synchronous rectification and gallium nitride transistors. One very typical application is a 26 W, 48 V to 5 V , Power over Ethernet Powered Device (PoE-PD).
A simplified forward converter schematic for this application using eGaN FETs and Linear Technology's LT1952in conjunction with the manufacturer's LTC3900 synchronous rectifier controller on the secondary side.
Download this whitepaper to learn more.
Read More
By submitting this form you agree to Efficient Power Conversion Corporation (EPC) contacting you with marketing-related emails or by telephone. You may unsubscribe at any time. Efficient Power Conversion Corporation (EPC) web sites and communications are subject to their Privacy Notice.
By requesting this resource you agree to our terms of use. All data is protected by our Privacy Notice. If you have any further questions please email dataprotection@techpublishhub.com
Related Categories: Inductors, Power, Semiconductors
More resources from Efficient Power Conversion Corporation (EPC)
eGaN® FETs in High Frequency Resonant Converters
In this white paper eGaN FET technology is applied in a high frequency resonant converter. Previously, the advantages provided by eGaN FETs in hard...
eGaN® FETs for Envelope Tracking
Gallium nitride transistors can be used to improve the efficiency of DC-DC conversion.
In this white paper we look at a new application that ...
Gallium Nitride (GaN) Technology Overview
For over three decades, power management efficiency and cost showed steady improvement as innovations in power MOSFET structures, technology, and c...
